National Institute of Technology Rourkela

राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला

ଜାତୀୟ ପ୍ରଯୁକ୍ତି ପ୍ରତିଷ୍ଠାନ ରାଉରକେଲା

An Institute of National Importance

All Publications

Soumya Ranjan Panda

Assistant Professor Grade-II
pandas@nitrkl.ac.in

S. R. Panda, P. Billy, A. Gauthier, N. Guitard, P. Chevalier, M. D. Matos, T. Zimmer, and S. Fregonese,"Next generation SiGe HBTs for energy efficient microwave power amplification", in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, India 2024, 10.1109/EDTM58488.2024.10511770       Inproceedings
S. R. Panda, T. Zimmer, A. Chakravorty, N. Derrier, and S. Fregonese,"Exploring compact modeling of SiGe HBTs in sub-THz range with HICUM", IEEE Transactions on Electron Devices, vol.71, no.1, pp.173 - 183, IEEE 2023, 10.1109/TED.2023.3321017       Article
S. R. Panda, S. Fregonese, P. Chevalier, A. Chakravorty, and T. Zimmer,"A TCAD-based analysis of substrate bias effect on asymmetric lateral SiGe HBT for THz Applications", IEEE Transactions on Electron Devices, vol.70, no.5, pp.2192-2198, IEEE 2023, 10.1109/TED.2023.3251281       Article
S. R. Panda, S. Fregonese, A. Chakravorty, and T. Zimmer,"SiGe-based nanowire HBT for THz applications", in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, South korea 2023, 10.1109/EDTM55494.2023.10103008       Inproceedings
R. V, S. R. Panda, and K. P. Pradhan,"1T FDSOI based LIF neuron without reset circuitry: a proposal and investigation", in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, South Korea 2023, 10.1109/EDTM55494.2023.10103130       Inproceedings
B. Saha, S. Fregonese, A. Chakravorty, S. R. Panda, and T. Zimmer,"Sub-THz and THz SiGe HBT electrical compact modeling", Electronics, vol.10, no.12, pp.1397, MDPI 2021, 10.3390/electronics10121397       Article
S. R. Panda, S. Fregonese, M. Deng, A. Chakravorty, and T. Zimmer,"TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz", Solid-State Electronics, vol.174, pp.107915, Elsevier 2020, 10.1016/j.sse.2020.107915       Article
S. Fregonese, M. Cabbia, C. Yadav, M. Deng, S. R. Panda, M. D. Matos, A. Chakravorty, and T. Zimmer,"Analysis of high-frequency measurement of transistors along with electromagnetic and SPICE cosimulation", IEEE Transactions on Electron Devices, vol.67, no.11, pp.4770-4776, IEEE 2020, 10.1109/TED.2020.3022603       Article
S. R. Panda, M. Cabbaia, M. Deng, S. Fregonese, C. Yadav, A. Chakravorty, and T. Zimmer,"SiGe HBT device characterization up-to 500 GHz: procedure and layout improvement of calibration standards", in 2020 5th IEEE International Conference on Emerging Electronics (ICEE), IEEE, 2020 5th IEEE International Conference on Emerging Electronics (ICEE), IIT Delhi, India 2020, 10.1109/ICEE50728.2020.9777022       Inproceedings
M. Bhoir, K. N. Kaushal, S. R. Panda, A. Singh, H., and N. Mohapatra,"Source underlap—a novel technique to improve safe operating area and output-conductance in LDMOS transistors", IEEE Transactions on Electron Devices, vol.66, no.11, pp.4823 - 4828, IEEE 2019, 10.1109/ted.2019.2942372       Article