N. Maji, B. Chakraborty, and T. K. Nath,"Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector", Applied Physics Letters, vol.122, pp.092404, AIP, March 2023, 10.1063/5.0133013       Article

N. Maji and T. K. Nath,"Demonstration of reconfigurable magnetic tunnel diode and giant tunnel magnetoresistance in magnetic tunnel junctions made with spin gapless semiconductor and half-metallic Heusler alloy", Applied Physics Letters, vol.120, pp.072401, AIP 2022, 10.1063/5.0077607       Article

N. Maji and T. K. Nath,"Enhanced spin lifetime with Elliot–Yafet model-like temperature dependence of spin- polarized holes in p-Si using Co2MnSi tunnel contact", ACS Applied Electronic Materials, pp.672 - 677, American Chemical Society, January 2022, 0.1021/acsaelm.1c01092       Article

N. Maji, J. Panda, A. S. Kumar, and T.,"Demonstration of efficient spin injection and detection into p-Si using NiFe2O4 based spin injector in NiFe2O4/MgO/p-Si device", Applied Physics A, vol.127, Springer Nature, January 2021, 10.1007/s00339-020-04214-w       Article

N. Maji, S. Shit, and T.,"Enhanced spin accumulation in semiconductor at room temperature using Ni0.65Zn0.35Fe2O4(NZFO) as spin injector in NZFO/MgO/p-Si device", Frontiers in Materials, October 2021, 10.3389/fmats.2021.721031       Article

N. Maji and T. K. Nath,"Robust and efficient electrical injection of spin-polarized carriers from a Zero-spin- gap half-metal V2NiAl into n-Si at room temperature", ACS Applied Electronic Materials, vol.2, pp.3299-3306, American Chemical Society, September 2020, 0.1021/acsaelm.0c00625       Article

N. Maji and T.,"Room temperature electrical spin injection from a new spin gapless ferromagnetic semiconducting inverse Heusler alloy Mn2CoSi into p-Si via SiO2 tunnel barrier", Journal of Applied Physics, vol.125, pp.173903, AIP, May 2019, 10.1063/1.5079975       Article

N. Maji, U. Kar, and T.,"GMR based spin valve like magnetic diode exploiting negative JMR in Heusler alloy thin film/semiconductor heterostructures", in Materials Today: Proceedings, vol.11, no.2, pp.673-678, Elsevier 2019, 10.1016/j.matpr.2019.03.026       Inproceedings

N. Maji, U. Kar, and T.,"Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure", Applied Physics A, vol.124, Springer Nature, January 2018, 10.1007/s00339-018-1579-4       Article

N. Maji and T.,"Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure", in AIP Conference Proceedings, AIP 2018, 10.1063/1.5029091       Inproceedings