Integrated circuit (IC) technology plays a vital role in the downscaling of microelectronic components for portable electronic devices. The incorporation of CMOS-compatible advanced materials and the development of fabrication technology have drawn considerable attention to meet the current demand for producing miniaturized microelectronic components like MOSFETs and resistive memory devices. Transition metal oxide films can be used as high-k gate dielectrics for both field effect transistors and resistive memory devices. However, the high dielectric constant, low oxide charge density (Q_ox), interface charge density (D_it), and leakage current are the basic requirements for a high-k dielectric film. In this research work, high-k dielectric Ta₂O₅ thin films were deposited on p-Si substrate by RF reactive sputtering by varying sputtering parameters. RF power of 150 W, sputtering pressure of 1.0 x 10^-2 mbar, Ar:O₂ gas flow ratio of 3:2 and substrate temperature of 300 °C are found to be the optimized sputtering condition. Post-deposition conventional annealing and rapid thermal annealing were carried out to improve the electrical properties of sputtered film. Thereafter, Zr and Hf dopants of various concentrations are doped in the Ta₂O₅ film using co-sputtering techniques. In addition, the dopant oxide like ZrO₂ and HfO₂ stack layer with Ta₂O₅ was fabricated with different thickness configurations to enhance the Ta₂O₅ film properties. The modulation of structural, morphological, and electrical properties of the undoped, doped, and stack-layered Ta₂O₅ thin film was studied using XRD, AFM, FESEM, XPS, capacitance-voltage, and current-voltage measurement techniques. A high dielectric constant of 28.5 with minimum Q_ox, (3.0 × 10¹¹ cm^&minus2) and D_it (4.2 x 10¹¹ eV^-1cm^-2) are found for the Hf doped Ta₂O₅ thin film. The resistive switching behavior of the Ta₂O₅ thin film was investigated by fabricating a MIM structure and found to be improved in doped and stack-layer Ta₂O₅ films. An I_SET/I_RESET ratio of 873 is estimated for the HfO₂/Ta₂O₅ stack layer.