BIOGRAPHY
Dr. Soumya Ranjan Panda is an Assistant Professor in the Department of Electrical Engineering at NIT Rourkela. He earned his PhD (2018-2022) in semiconductor devices, focusing on high-frequency SiGe HBT modeling and characterization, within the field of Microelectronics and VLSI. His joint PhD program was hosted by the University of Bordeaux, France, in partnership with IIT Madras. Following his doctoral studies, he served as a postdoctoral researcher (2022-2024) at IMS Laboratory in Bordeaux, concentrating on the development of next-generation SiGe HBTs for microwave power amplifier applications. Dr. Panda spent approximately six years in France as a researcher (2018-2024) and traveled globally for research presentations and conferences as well as personal exploration. His research has been published in prestigious journals, including IEEE Transactions on Electron Devices (TED), where his 2023 article, “Exploring Compact Modeling of SiGe HBTs in the Sub-THz Range with HICUM,” was featured on the front page. He has also presented his work at renowned conferences, such as the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) in the USA, IEEE Electron Devices Technology and Manufacturing (EDTM) in South Korea, and ICEE. In 2023, he received the Best Paper Award at EDTM and was an invited speaker at EDTM 2024. Dr. Panda is a recipient of the prestigious Marie Sklodowska-Curie Actions Individual Postdoctoral Fellowship from the European Commission. He has expertise in tools and techniques essential for semiconductor device research, including: (1) Sentaurus TCAD (both process and device) for semiconductor device simulation, (2) Semiconductor device characterization (DC, RF, Load-Pull) (3) Keysight's ICCAP and ADS (4) Open-source Qucs and Qspice. His current research interests are centered around areas in semiconductor devices both for low/high power devices.
EXPERTISE INFORMATION
Research Group
- Communication and Signal Processing
Areas of Interest
- Microelectronics and VLSI (Semiconductor Device Simulation/Characterization, Modelling and Applications)
- Low power/High frequency semiconductor devices (Simulation and modelling of FinFETs, SiGe HBTs, NSFETs, 2D material, FET Sensors)
- High power semiconductor devices (Simulation and modelling of LDMOS, GaN, SiC power devices, NSFETs, 2D material)
- Application of the high-frequency devices in power amplifier circuit design (Circuit for Wi-Fi/LNA module and all)
- Application of Power semiconductor devices in power electronics circuits for converter applications (Circuit for DC-DC converter and all)
Soumya Ranjan Panda
ସୌମ୍ୟରଞ୍ଜନ ପଣ୍ଡା
Assistant Professor Grade-II
Electrical Engineering
pandas@nitrkl.ac.in
14
PUBLICATIONSPERSONAL INFORMATION
Soumya Ranjan Panda
Assistant Professor Grade-II
Electrical Engineering
Room Number:
Department of Electrical Engineering, National Institute of Technology Rourkela, Sundargarh, Odisha, India - 769008
2022
Ph.D.
(Semiconductor Devices)Jointly from University of Bordeaux, France (host university) & Indian Institute of Technology (IIT) Madras
Teaching Experience
- Semiconductor Device Laboratory, NIT Rourkela, 12 Sep 2024 - Till date
- Research Fellow, IIT Gandhingar, 01 Mar 2017 - 11 Aug 2018
- Basic/Analog/Digital Electronics, Signals and System, Communication Sytem, BOSE Cuttack, CET(now OUTR) Bhubaneswar, 21 Aug 2012 - 17 Jul 2015
Post Doctoral Research Experience
- High-Frequency Semiconductor Device, IMS Laboratory, Bordeaux, France, 01 Sep 2022 - 31 Jul 2024
Total Publications: 14
S. R. Panda, P. Billy, A. Gauthier, N. Guitard, P. Chevalier, M. D. Matos, T. Zimmer, and S. Fregonese,"Next generation SiGe HBTs for energy efficient microwave power amplification", in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, India 2024, 10.1109/EDTM58488.2024.10511770 Inproceedings
S. R. Panda, T. Zimmer, A. Chakravorty, N. Derrier, and S. Fregonese,"Exploring compact modeling of SiGe HBTs in sub-THz range with HICUM", IEEE Transactions on Electron Devices, vol.71, no.1, pp.173 - 183, IEEE 2023, 10.1109/TED.2023.3321017 Article
S. R. Panda, S. Fregonese, P. Chevalier, A. Chakravorty, and T. Zimmer,"A TCAD-based analysis of substrate bias effect on asymmetric lateral SiGe HBT for THz Applications", IEEE Transactions on Electron Devices, vol.70, no.5, pp.2192-2198, IEEE 2023, 10.1109/TED.2023.3251281 Article
S. R. Panda, S. Fregonese, A. Chakravorty, and T. Zimmer,"SiGe-based nanowire HBT for THz applications", in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, South korea 2023, 10.1109/EDTM55494.2023.10103008 Inproceedings
R. V, S. R. Panda, and K. P. Pradhan,"1T FDSOI based LIF neuron without reset circuitry: a proposal and investigation", in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), IEEE, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, South Korea 2023, 10.1109/EDTM55494.2023.10103130 Inproceedings
- EE2406 : Electronic Circuits {Theory}
- EE3402 : Communication Systems {Theory}
- EE3704 : Embedded Systems Laboratory {Practical}
Awards And Honours
- Reciepient of Marie Skłodowska-Curie Actions (MSCA) Indivisual Postdoctoral Fellowships from European Union in the 2023 call, 2024
- Invited speaker at 8th Electronics Device Technology and Manufacturing (EDTM) 2024, Banglore, India, 2024
- International travel support from Bordeuax, France to Banglore, India, for EDTM 2024, 2024
- International travel support from Bordeuax, France to Seoul, South Korea, for EDTM 2023, 2023
- Best paper awared from 7th Electronics Device Technology and Manufacturing (EDTM) 2023, hoisted at Seoul, South Korea, 2023
- International travel support from Bordeuax, France to Tenesse, USA, for BCICTS 2019, 2019
Memberships / Fellowships
- IEEE EDS from 2022 Onwards, 2024