Course Details
Subject {L-T-P / C} : PH6352 : Semiconductor Devices Technology { 3-0-0 / 3}
Subject Nature : Theory
Coordinator : Prof. Jyoti Prakash Kar
Syllabus
Review of semiconductor device processing technologies, Clean room, Silicon wafer fabrication, Wafer cleaning, Oxidation techniques, Growth kinetics, Oxide growth measurements techniques, Defects in silicon and silicon dioxide, Diffusion, Ficks laws, Sheet resistivity and measurement of dopant profiles, Ion implantation, Mask fabrication, Pattern transfer, Lithography process: optical lithography, X-ray and e-beam lithography, Introduction to vacuum systems, Thin film growth (Evaporation, Sputtering, Chemical vapour deposition and Molecular beam epitaxy), Polysilicon, SiO2, Si3N4 and silicide formation, Fabrication of Ohmic and Schottky contacts, Lift-off techniques, Wet and plasma assisted etching techniques, Porous silicon, Encapsulation, Wire bonding, Packaging of semiconductor devices, Overview of process flow for IC technology, Future trends and challenges.
Course Objectives
- Familiarization with the current trend and challenges of semiconductor devices
- Basic knowledge about the semiconducting materials, devices and their processing
Course Outcomes
CO1: To know the science and technology of various IC fabrication processes <br />CO2: To know the process flow for fabrication of semiconductor devices
Essential Reading
- J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Prentice Hall, 2000
- G.S. May, S.M. Sze, Fundamentals of Semiconductor Fabrication, Wiley, 2003
Supplementary Reading
- S.A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press, 2001
- S.K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley-Interscience, 1994