राष्ट्रीय प्रौद्योगिकी संस्थान राउरकेला
National Institute of Technology Rourkela

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Seminar Title
::
Morphological and electrical characterizations of dip coated TiO2 thin films with different concentration of additives
Seminar Type
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Departmental Seminar
Department
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Electrical Engineering
Speaker Type
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Student
Speaker Name
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Sritama Roy (Roll No : 514EE1003)
Date  &  Time
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20 Feb 2019  10:30 AM
Venu
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UG Seminar Room (EE Department) (Supervisor : Prof. J P Kar and Prof. P K Sahu)
Contact
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Prof. Sanjeeb Mohanty, Email :sanjeeb.mohanty@nitrkl.ac.in, Phone : 2405
Abstract
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Porous TiO2 thin films were fabricated by dip coating technique using thiourea (CH4N2S) and pluronic F-127 as the doping sources. In this process, titanium (IV) n-butoxide [Ti(O-nBu)4] was used as the source of titanium. Thiourea to [Ti(O-nBu)4] molar ratio was varied from 0 to 10 %, whereas the concentration of pluronic F-127 was fixed at 0.003 M. The anatase phase of dip coated TiO2 films was observed from XRD study. The porous nature of the TiO2 thin films were enhanced with the concentration of thiourea leading towards the significant surface modulation as revealed from FESEM studies. The oxide and surface charge densities of the dip coated TiO2 films were estimated from the capacitance-voltage measurements, where the undoped as well as 8 % thiourea doped films have possessed higher density of trapped charges. The films, synthesized with 8 % of thiourea, have shown better resistance switching behaviour
 
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